Design Guidelines for Gate-Normal Hetero-Gate-Dielectric (GHG) Tunnel Field-Effect Transistors (TFETs)
نویسندگان
چکیده
منابع مشابه
Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs)
The steady scaling-down of semiconductor device for improving performance has been the most important issue among researchers. Recently, as low-power consumption becomes one of the most important requirements, there have been many researches about novel devices for low-power consumption. Though scaling supply voltage is the most effective way for low-power consumption, performance degradation i...
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Linearity characteristics of hetero-gatedielectric tunneling field-effect transistors (HG TFETs) have been compared with those of high-k-only and SiO2-only TFETs in terms of IIP3 and P1dB. It has been observed that the optimized HG TFETs have higher IIP3 and P1dB than high-k-only and SiO2-only TFETs. It is because HG TFETs show higher transconductance (gm) and current drivability than SiO2-only...
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ژورنال
عنوان ژورنال: IEEE Access
سال: 2020
ISSN: 2169-3536
DOI: 10.1109/access.2020.2985125